Fabrication and Characterizations of Asymmetric Schottky Barrier Thin-Film Transistors and Floating Gate Memory Devices
碩士 === 國立交通大學 === 電子研究所 === 99 === In this thesis, asymmetric Schottky barrier (ASSB) thin film transistors (TFTs) are successfully fabricated by utilizing a novel and low-cost double patterning technique. The method involves twice the lithography with an I-line stepper and subsequent etching proces...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92368562969661525060 |