Studies of Exploratory Silicon Device Fabrication and Sensor Application
博士 === 國立交通大學 === 電子研究所 === 99 === In the past decade, SOI CMOSFETs have become attractive because they provide full dielectric isolation and reduced junction capacitance for high-performance circuit. Very recently, remarkable progress has been achieved in fully-depleted silicon on insulator (FD-SOI...
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| Format: | Others |
| Language: | en_US |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11988333361350713646 |