Experimental Investigation of Carrier Mobility considering Various Scattering Mechanisms for Uniaxial Strained MOSFETs

Experimental Investigation of Carrier Mobility considering Various Scattering Mechanisms for Uniaxial Strained MOSFETs

博士 === 國立交通大學 === 電子研究所 === 99 === This dissertation provides a comprehensive study on the impact of process-induced uniaxial strain on the carrier mobility considering various scattering mechanisms. First, we introduce a BSIM-based method for the Rsd extraction. This BISM-based method is more accur...

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Bibliographic Details
Main Authors:	Chen, Po-Nien, 陳柏年
Other Authors:	Su, Pin
Format:	Others
Language:	en_US
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/62521124326127207360

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