Experimental Investigation of Carrier Mobility considering Various Scattering Mechanisms for Uniaxial Strained MOSFETs
博士 === 國立交通大學 === 電子研究所 === 99 === This dissertation provides a comprehensive study on the impact of process-induced uniaxial strain on the carrier mobility considering various scattering mechanisms. First, we introduce a BSIM-based method for the Rsd extraction. This BISM-based method is more accur...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2010
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Online Access: | http://ndltd.ncl.edu.tw/handle/62521124326127207360 |