A Study on the Modified Schottky Barrier (MSB) FETs and TiN Nanocrystal Memories with Multi-Gate Structure
博士 === 國立交通大學 === 電子研究所 === 99 === As the technology of CMOS and nonvolatile memory continuously scale down, several unpreventable issues would be encountered on the classical planar device structure. Hence, multi-gate structure is provided to enhance the device performance either on the logic devic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50245352571277475660 |