Study on Semiconductor Quantum Dot Lasers with Various Active Layers
碩士 === 國立交通大學 === 電子研究所 === 99 === This thesis studies the quantum-dots laser diodes (QDLD) with various active layer structures. We first discuss the device characteristics of processed QDLD with cleaved facets and with various cavity lengths. The saturation gain of 3-layers、5-layers、5 p-doped and...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69822371839731428741 |