The Research of High Performance Ge nMOSFET Improved by Interface Passivation and Laser Annealing
博士 === 國立交通大學 === 電子研究所 === 99 === The development of the high performance complementally metal-oxide-semiconductor field effect transistors (CMOSFET) is expected to be imperative as the semiconductor devices continuously decrease in size along with the development of current logical circuits and hi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90879358598473936812 |