Current conduction mechanisms and reliability properties of HfO2 MIS capacitor with dual plasma treatment
碩士 === 國立交通大學 === 電子研究所 === 99 === Amorphous silicon dioxide gate dielectric proffered many advantages in fabrication of MOSFET device,such as thermodynamically stable,high-quality Si/SiO2 interface and excellent electrical isolation properties.Therefore silicon dioxide has been applied popularly in...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65335609892293282107 |