A New Experimental Determination of Transport Parameters in High Performance Schottky-Barrier MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 99 === In recent years, SBMOS with metal-silicided source/drain has received much attention for its better Ion/Ioff ratio and the immunity to short channel effect but has shown a worse performance due to Schottky junction at the silicide and the channel. In order to allev...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96242599112857809132 |