Improvement on electrical characteristics of HfO2 MIS capacitor with dual plasma treatment
碩士 === 國立交通大學 === 電子研究所 === 99 === For more than 30 years, SiO2 films have been the preferred material for gate dielectric in MOS-based structure. The aggressive scaling of MOS devices is almost reaching the fundamental and electric limits of convention SiO2 as the gate insulator. When the gate leng...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93480195403062682403 |