Fabrication and Characterization of GaN-based Semiconductor Devices for High Frequency and High Power Applications

博士 === 國立交通大學 === 材料科學與工程學系 === 99 === GaN-based semiconductors are promising candidates for RF high frequency wireless, power electronics, and optoelectronics applications. This thesis focuses GaN-based High Electron Mobility Transistors (HEMTs) for high frequency and high power application. First...

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Bibliographic Details
Main Authors: Chang, Chia-Ta, 張家達
Other Authors: Chang, Edward Yi
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/59417888525137740170