Study of high-k/III-V MOS devices
碩士 === 國立交通大學 === 材料科學與工程學系 === 99 === III-V semiconductor material has been researched and considered as the alternative channel material to silicon for complementary Metal-Oxide-Semiconductor (CMOS) applications beyond the 22nm node due to its superior properties. High-k dielectric was introduced...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01397521585270486842 |