Structure, Optical and Electrical Characteristic Analysis of InGaN-based Light-emitting Diodes Grown on Patterned Si substrates
碩士 === 國立交通大學 === 加速器光源科技與應用碩士學位學程 === 99 === In this study, we investigated the structural, optical and electrical characteristics of InGaN-based light emitting diodes (LED) grown on micro- and nano-patterned Si (111) substrates (MPLED and NPLED). The result of X-ray diffraction revealed that the G...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/65138280951700063037 |