An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement

碩士 === 國立中興大學 === 資訊科學與工程學系所 === 99 === In this work, we propose a new interleaving arrangement to average the temporary error bits caused by dichotomic serial sensing architecture in multilevel flash. Furthermore, the proposed arrangement also can effectively enhance the reliability (MTBF) of multi...

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Main Authors:	Tzung-Han Yeh, 葉宗翰
Other Authors:	Der-Chen Huang
Format:	Others
Language:	zh-TW
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/44622038307594636418

id	ndltd-TW-099NCHU5394035
record_format	oai_dc
spelling	ndltd-TW-099NCHU53940352017-10-29T04:34:05Z http://ndltd.ncl.edu.tw/handle/44622038307594636418 An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement 一種使用交錯式排列提升多值快閃記憶體可靠度的方法 Tzung-Han Yeh 葉宗翰碩士國立中興大學資訊科學與工程學系所 99 In this work, we propose a new interleaving arrangement to average the temporary error bits caused by dichotomic serial sensing architecture in multilevel flash. Furthermore, the proposed arrangement also can effectively enhance the reliability (MTBF) of multilevel flash. In our experiment results, interleaving arrangement can provide low error bits rate then only using bit-layer arrangement. And use simple switch circuits realization interleaving arrangement. In bit-layer method, using dichotomic serial sensing output stage will create cell spare part lengths uneven demand. Der-Chen Huang 黃德成 2011 學位論文 ; thesis 36 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中興大學 === 資訊科學與工程學系所 === 99 === In this work, we propose a new interleaving arrangement to average the temporary error bits caused by dichotomic serial sensing architecture in multilevel flash. Furthermore, the proposed arrangement also can effectively enhance the reliability (MTBF) of multilevel flash. In our experiment results, interleaving arrangement can provide low error bits rate then only using bit-layer arrangement. And use simple switch circuits realization interleaving arrangement. In bit-layer method, using dichotomic serial sensing output stage will create cell spare part lengths uneven demand.
author2	Der-Chen Huang
author_facet	Der-Chen Huang Tzung-Han Yeh 葉宗翰
author	Tzung-Han Yeh 葉宗翰
spellingShingle	Tzung-Han Yeh 葉宗翰 An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
author_sort	Tzung-Han Yeh
title	An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
title_short	An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
title_full	An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
title_fullStr	An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
title_full_unstemmed	An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement
title_sort	enhancing reliability method for multilevel flash memory by using interleaving arrangement
publishDate	2011
url	http://ndltd.ncl.edu.tw/handle/44622038307594636418
work_keys_str_mv	AT tzunghanyeh anenhancingreliabilitymethodformultilevelflashmemorybyusinginterleavingarrangement AT yèzōnghàn anenhancingreliabilitymethodformultilevelflashmemorybyusinginterleavingarrangement AT tzunghanyeh yīzhǒngshǐyòngjiāocuòshìpáiliètíshēngduōzhíkuàishǎnjìyìtǐkěkàodùdefāngfǎ AT yèzōnghàn yīzhǒngshǐyòngjiāocuòshìpáiliètíshēngduōzhíkuàishǎnjìyìtǐkěkàodùdefāngfǎ AT tzunghanyeh enhancingreliabilitymethodformultilevelflashmemorybyusinginterleavingarrangement AT yèzōnghàn enhancingreliabilitymethodformultilevelflashmemorybyusinginterleavingarrangement
_version_	1718557145181454336

An Enhancing Reliability Method for Multilevel Flash Memory by Using Interleaving Arrangement

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