| Summary: | 碩士 === 國立中興大學 === 機械工程學系所 === 99 === As the density requirement of integrated circuit (IC) and the progress of in semiconductor technology. A short term is using stack die then do the assembly process for 3DIC integrated circuit become the main trend. The 3DIC is using the DAF to stack chip, it will become the complex material, which has topside chipping, backside chipping and film burr such problems. This research study when using the Nd:YAG laser to saw the complex thin wafer, how the process parameter influence the process quality, to build the model about the process quality and process parameter, as the basis for operate complex semiconductor wafer laser saw process.
In this study , we first examine the major parameter which influence process quality by operating pre-experiment, which shows the topside chipping and film burr can be solved effective by laser process , but there still have a little topside chipping , so this study is using the full factor experiment and combine with ANFIS, to build a forecast model for chip topside chipping. The study result show the air flow, laser defocus and Polygon revolution at the laser process how to influence the process quality. During the full factor experiment when the air flow increase from 3L/min to 6 L/min , the chipping size will decrease from 4.09μm to 3.47μm, the percentage is down about 15%. When the laser defocus to in the bottom of silicon wafer, the chipping size decrease from 4.09μm to 3.12μm ,the percentage is down about 23%. The Polygon revolution change from 3000 rpm to 3250 rpm and the laser overlap from 80% to 85%, the chipping size is decrease to 4.1μm from 4.09μm, the quality has no obvious difference. And further using the ANFIS ,use the Gaussian Blur, can get the average minimum inaccuracy about 2.46%, the accuracy is about 97.54%. However , as the forecast model inferences the suitable process parameter, want to get the smaller chip topside chipping size, the air flow need to large then 4L/min, laser defocus need to in the bottom of silicon wafer, the Polygon revolution need to in the range between 3100rpm and 3250rpm, can get the smaller topside chipping size.
|
|---|
