Fabrication of cobalt silicide nanowires on SOI substrates and its properties
碩士 === 中興大學 === 材料科學與工程學系所 === 99 === Cobalt silicide (CoSi2) nanowires has been widely used as gate electrodes, contacts and interconnects in nanoelectronic devices due to its line-width independent, low resistivity, high thermal stability and small lattice constant mismatch of 1.2% with silicon. S...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/05317664247389580323 |