Resistive Switching Characteristics of Titanium Oxynitride Thin Films

碩士 === 明志科技大學 === 材料工程研究所 === 100 === In this study, TiOxNy thin-film were prepared under different conditions by DC magnetron sputtering. UV-VIS was applied to transmittance of 80 percentage of TiOxNy thin film. The X-ray photoelectron spectroscopy proved the valence variation of Ti, accompanied by...

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Bibliographic Details
Main Authors: Chang, Kanghua, 張剛樺
Other Authors: Chang, Lichun
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/98658243272009246908