Study on the deposition process parameters of In2S3 films by the Taguchi method

• Main Authors: Cheng-Ching Chang, 章正慶
• Other Authors: Chun-Yao Hsu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/14666931191963565543

碩士 === 龍華科技大學 === 工程技術研究所 === 99 === In the study, we examine the optimization of the process parameters of In2S3 films deposited on inexpensive soda-lime glass substrates by rf magnetron sputtering. The Taguchi method with a L9 orthogonal array, signal-to-noise (S/N) ratio and analysis of variance (ANOVA) were employed to investigate the performance characteristics of the coating operations. The influences of the various sputtering parameters, Such as rf power (40, 80, 120 W), sputtering pressure (5, 7.5, 10 mtorr), substrate temperature (room, 100, 200 oC) and coating time (30, 60, 90 min) on deposition rates, structural, morphological, and optical transmittance of In2S3 films. By applying annealing at 300 and 500 oC in a vacuum ambient for 30 min, the In2S3 films show the higher optical transmittance in the visible region. In addition, the adhesive force of the thin films is tested.