| Summary: | 碩士 === 龍華科技大學 === 工程技術研究所 === 99 === This thesis will present the deposition process of SiOx film by the atmospheric pressure RF plasma using organic silicon source Tetraethoxysilane (TEOS) as silica films deposited precursor. The effects of the process parameters, such as power, oxygen flow rate, carrier gas flow rate, substrate moving speed, distance between plasma source and substrate were studied herein. From the results of the experimental data, the relationships among the process parameters as mentioned above will be obtained the fast deposition rate, high hardness, good surface roughness and hydrophilic SiOx film. In the mean time, the nanoindentation, scanning electron microscopy (SEM), atomic force microscopy (AFM), contact angle measuring instrument, Fourier transform infrared spectroscopy (FTIR), ellipsometry were also used to measure the nanomechanical properties of SiOx film.
In this thesis, the thickness of SiO2 film deposited on Si substrate measured by SEM were used to calibrate the parameters in ellipsometer model. Then the accurate model of SiO2/Si used to measure the values of (n,k) can be obtained.
Finally, the Taguchi method and response surface method were used to study the optimized process parameters. The deposition parameters of the high quality thin films were shown as surface roughness as low as 0.842 nm, hardness 1.91GPa, a contact angle of 2.8o, deposition rate 27.9nm/min, refractive index n is 1.462
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