The Study of Supercritical Fluid Treatment on Nickel-Silicon-Oxide Thin Film for Resistive Random Access Memory Application
碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 99 === In this study, the resistance switching characteristic of SiO2:Ni-based RRAM was fabricated. The bottom electrode (TiN) was deposited on the substrate of Si2O3. The SiO2:Ni (35nm) thin film was deposited on the bottom electrode of TiN by Multi-Target Sputter...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60948659002128510902 |