| Summary: | 碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 99 === In this papaer, the Ta-Si-N thin film was used as sensing layer of microbolometers. The effect of RTA annealing on electrical properties and stress of Ta-Si-N film was investigated. Ta-Si-N thin films were fabricated by using co-sputtering. Sheet resistance and temperature coefficient of resistance were measured. The effect of RTA annealing after 600, 700, 800 and 900℃ at 60s on TCR, sheet resistance and sterss was discussed. The effect of RTA annealing with/without different gases during the annealing was also investigated. The properties of Ta-Si-N microbolometers were measured.
The result indicates that Ta-Si-N thin film was NTCR material. The TCR, sheet resistance and stress were changed after RTA annealing. The TCR of FN2%=28 Ta-Si-N thin film(-0.68%/K) was better than the others. The stress of FN2%=28 Ta-Si-N thin film was close to zero after annealing at700℃. By adding N2O during RTA annealing at 900℃, the TCR of FN2%=28 Ta-Si-N thin film was about -0.71%/K. The FN2%=28 Ta-Si-N thin film was chosen as sensing layer of microbolometers, because it has higher TCR and lower stress after RTA annealing 700℃, 60s. The TCR of Ta-Si-N microbolometers was measured about -0.44%/K.
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