Reactive sputtering of TiOxNy deposition by the IBSD system with different N containing gases

• Main Authors: TuChunWei, 涂俊瑋
• Other Authors: 吳坤東教授
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/07777111837788297746

碩士 === 輔仁大學 === 物理學系 === 99 === Recently, nitrogen-doped titanium oxide (TiOxNy) thin films have been drawn lots of interests since it has a narrower bandgap compared to TiO2 such that the absorption light in it can be shifted to visible light region. However, it is still a controversial issue what is the chemical bonding of N in the TiOxNy film. In this research, we explored not only the N bonding but also the optical properties of the TiOxNy films. Three different N containing gases of N2, N2O and NH3 were used separately as ambient gas to grow the films with argon as the working gas. Films of TiOxNy were then analyzed by using grazing incidence XRD, XPS, and UV–VIS-NIR spectrophotometer to investigate its crystallinity, N bonding, and optical properties. TiOxNy films were fabricated by ion-beam-sputtering deposition (IBSD) technique onto a quartz substrate at 400℃. The other films was deposited with oxygen as ambient gas and N2 as working gas. The ion-beam voltage and ion-beam current of the ion source were kept at 1000 V and 30 mA, respectively, during the film deposition. It was found that the deposition rate varied with the N containing ambient gas. The highest rate was observed when NH3 was used and when N2 applied the rate was slowest. The films deposited by the NH3 as ambient gas and also deposited by using N2 as working gas showed an amorphous structure and more reduction in the band gap. An anatase phase with a (101) preferred orientation was detected in the crystalline films. Finally the films were measured by XPS in order to examine the N bonding.