Study of Electrical Characteristics in COMS with Hybrid Orientation Technology
碩士 === 正修科技大學 === 電子工程研究所 === 99 === Abstract In this work, to obtain the highest intrinsic electron and hole carrier mobility, the n- and pMOSFETs are fabricated on (100)- and (110)-orientated surface, respectively, with channel direction along <100> at a Si wafer using hybrid orientation te...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56560017366662055779 |