The characterization of AlGaN / GaN high-power transistor device structure in SiC and Si substrate
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === In recent years, with the public demand for wireless products is growing, thus creating a high-power semiconductor device on the required output is also higher, although the traditional substrate materials have a process to produce cheap price stability and...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27078564942347333047 |