Characteristic Analysis of gallium-doped ZnO Thin Films on n-type Si Substrates Grown by MOCVD
碩士 === 中華科技大學 === 電子工程研究所碩士班 === 99 === In this study, we using Zn [TMHD]2 and Ga [TMHD]3 as precursors, oxygen as reacting gas and nitrogen as carrier gas, to deposite Gallium-doped ZnO thin films on an n-type Si（100）substrates. A home-made single-wafer vertical MOCVD system is used. The results ar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36571849109287951315 |