The Investigation of Drain Current Variation in Strained CMOS Devices
碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, a statistical multivariate analysis (multivariate analysis) method has been employed to study the drain current and threshold voltage fluctuation and variation in strained CMOS devices. The variations are caused by the strain-induced effect and the c...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88621290809191557807 |