The High-k Charge Trapping Layer in Flash Memory Application
碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, the Ti-doped high-k ZrO2 material has larger dielectric constant and better characteristics. The RTA annealing process can repair the oxide defect and obtain a stronger bonding to improve the device characteristics. On the other hand, ZrO2 material w...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/18415680719091711437 |