Luminescence Improvement of Ⅲ-Ⅴ Based Light Emitting Diode by Selective Circuit Region Confinement
博士 === 長庚大學 === 電子工程學系 === 99 === Abstract The luminescence of Ⅲ-Ⅴ based light emitting diodes was investigated through three kinds of selective circuit region confinement techniques. To increase the external quantum efficiency of a light-emitting diode while limiting its forward voltage, we prepare...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50129701918716924020 |