Characterization of Metal Gate Work Function Modulation with High-k Gate Dielectrics by Nitrogen and Fluorine Incorporation
博士 === 長庚大學 === 電子工程學系 === 99 === We investigated of the hafnium (Hf) base metal nitride (HfNx and HfxMoyNz) for metal gate electrode application in this dissertation. For HfNx gate electrode with SiO2 gate dielectric MOS capacitors, the effective work function (Φm,eff) of HfNx can be tuned from 4.1...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31772304908441543519 |