The Characteristics of CIGS Absorber And SiOx Barrier Layer
碩士 === 長庚大學 === 光電工程研究所 === 99 === In this thesis, the processing parameters of fabricating barrier layer by spin coating SOG are studied. In addition, the film quality of CIGS layer prepared by sputtering metal precursor and then selenization is also investigated. The measurements of SEM XRD, Hall...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44734939669733507018 |