Development of High-k Eu2O3 Dielectrics for Poly-Si Thin Film Transistors Devices
碩士 === 長庚大學 === 光電工程研究所 === 99 === In this work, we deposited Poly-Si channel by SPC crystal system, we utilize high κ value material europium oxide to form the gate dielectric of the low temperature poly-Si thin film transistors by dual e-gun evaporation system, Al as its gate electrode. Compare to...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40849403080624569167 |