| Summary: | 碩士 === 長庚大學 === 化工與材料工程學系 === 99 === In this thesis research, zirconium oxide (ZrO2) thin films were prepared by sol-gel method and the effects of the type of annealing heat treatment (conventional furnace annealing (CFA) and rapid thermal annealing (RTA)) employed and the post-annealing atmosphere (N2, O2 or N2O) on the electrical and physical properties of the sol-gel derived ZrO2 thin films were investigated. In addition, the effect of crystal structure on the leakage current and the capacitance of the capacitors with sol-gel derived ZrO2 thin film dielectric layers was also investigated.
From the experimental results, the sol-gel derived ZrO2 thin films annealed at 800℃ for 2 hour possessed the best electrical characteristics of a minimum leakage current of 9.74 x 10-9 amp and a dielectric constant of 10 when CFA process was employed. Employing RTA process, the sol-gel derived ZrO2 thin films annealed at 800℃ for 60 seconds under N2 atmosphere possessed the highest dielectric constant of 21 but also a high leakage current of 5.56 x 10-6 amp.
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