Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials

Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials

碩士 === 國立中正大學 === 機械工程學系暨研究所 === 99 === In recent years, multi-layer chip-stacking and reduce the size of chip have become important technology for three dimensional chip stacking packages. Through-silicon-via (TSV) is the most important technology for chip-stacking at present. Filled metal connect...

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Main Authors: Chen,Hsuanyu, 陳宣煜
Other Authors: Liu,Deshin
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/50475100606603279211
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spelling ndltd-TW-099CCU004890432015-10-13T20:08:43Z http://ndltd.ncl.edu.tw/handle/50475100606603279211 Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials 發展數值模擬模型探討複合填孔金屬之熱應力分析 Chen,Hsuanyu 陳宣煜 碩士 國立中正大學 機械工程學系暨研究所 99 In recent years, multi-layer chip-stacking and reduce the size of chip have become important technology for three dimensional chip stacking packages. Through-silicon-via (TSV) is the most important technology for chip-stacking at present. Filled metal connect each chip, the sorts and proportion of filled metal are important indexes for detecting the TSV structure. In this study ,a method coupled Finite element and infinite element methods has been developed to analyzed the thermal stress distribution of TSV structures; and investigated types, proportion of the metal layers, and the size effect of internal void of the filled in metals. Liu,Deshin 劉德騏 2011 學位論文 ; thesis 106 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中正大學 === 機械工程學系暨研究所 === 99 === In recent years, multi-layer chip-stacking and reduce the size of chip have become important technology for three dimensional chip stacking packages. Through-silicon-via (TSV) is the most important technology for chip-stacking at present. Filled metal connect each chip, the sorts and proportion of filled metal are important indexes for detecting the TSV structure. In this study ,a method coupled Finite element and infinite element methods has been developed to analyzed the thermal stress distribution of TSV structures; and investigated types, proportion of the metal layers, and the size effect of internal void of the filled in metals.
author2 Liu,Deshin
author_facet Liu,Deshin
Chen,Hsuanyu
陳宣煜
author Chen,Hsuanyu
陳宣煜
spellingShingle Chen,Hsuanyu
陳宣煜
Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
author_sort Chen,Hsuanyu
title Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
title_short Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
title_full Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
title_fullStr Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
title_full_unstemmed Development of Numerical Simulation Models for Analysis Thermal Stress of Through-Silicon-Via with Composite Filler Materials
title_sort development of numerical simulation models for analysis thermal stress of through-silicon-via with composite filler materials
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/50475100606603279211
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AT chénxuānyù fāzhǎnshùzhímónǐmóxíngtàntǎofùhétiánkǒngjīnshǔzhīrèyīnglìfēnxī
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