Effects of Replaced Metal Gates on Reliability of Hf-based High-k Gate Dielectrics
碩士 === 雲林科技大學 === 光學電子工程研究所 === 98 === High-k dielectric constant (High dielectric constant oxide layer, high-K layer) material has been used to replace the conventional ultra-thin SiO2 because it reveals large direct tunneling leakage current, and leads to large power consumption problem. Many kind...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19737682284494963328 |