P-type amorphous carbon films prepared by radio frequency sputtering for the application of photovoltaic solar cells

• Main Authors: Yi-Jia Chiou, 邱怡嘉
• Other Authors: 王錫福
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/p7h64g

碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 98 === A boron-doped amorphous carbon film was prepared by radio frequency (r.f.) magnetron sputtering method. The sputtering targets used were composed of boron pieces buried in a graphite disc. The boron-doped amorphous carbon films after annealed at 500 oC showed semiconductor behavior was the stable p-type conduction on the Hall-effect measurement. The p-type amorphous carbon film with a boron content of 15.9 at.% showed a carrier concentration of 6×1016 cm-3, a mobility of 100 cm2/V•s, and an conductivity of 0.1 Ω-cm. By using this p-type film, amorphous carbon heterojunction solar cell with the p-C/n-Si structure was fabricated. The cell photovoltaic characteristics were investigated as function of various electrode structures. The short-circuit current density (Jsc) and efficiency (η) increased from were 4.82 mA/cm2 and 0.25% for the conventional solar cell with an Al electrode layer to 22.02 mA/cm2 and 3.41% for the solar cell with an Al/ITO/p-C/n-Si/Al structure, respectively. The low series resistance (8.81 Ω) leads to a maximum power conversion efficiency of the Al/ITO/p-C/n-Si/Al structure solar cell.