| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 98 === A boron-doped amorphous carbon film was prepared by radio frequency (r.f.) magnetron sputtering method. The sputtering targets used were composed of boron pieces buried in a graphite disc. The boron-doped amorphous carbon films after annealed at 500 oC showed semiconductor behavior was the stable p-type conduction on the Hall-effect measurement. The p-type amorphous carbon film with a boron content of 15.9 at.% showed a carrier concentration of 6×1016 cm-3, a mobility of 100 cm2/V•s, and an conductivity of 0.1 Ω-cm. By using this p-type film, amorphous carbon heterojunction solar cell with the p-C/n-Si structure was fabricated. The cell photovoltaic characteristics were investigated as function of various electrode structures. The short-circuit current density (Jsc) and efficiency (η) increased from were 4.82 mA/cm2 and 0.25% for the conventional solar cell with an Al electrode layer to 22.02 mA/cm2 and 3.41% for the solar cell with an Al/ITO/p-C/n-Si/Al structure, respectively. The low series resistance (8.81 Ω) leads to a maximum power conversion efficiency of the Al/ITO/p-C/n-Si/Al structure solar cell.
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