Studies on Preparation and Electrical Properties of (Bi4-XNdX)Ti3O12 Ferroelectric Thin Films
碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 98 === Dopping suitable trivalent rare-earth ions could improve ferroelectric properties of Bi4Ti3O12 (BTO) based materials. B site of BTO can be substituted by lanthanide (La) to increase the stability of the structure, It has been reported that neodymium (Nd)-sub...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e2p628 |