Optoelectronic properties of the p-MnZnO/n-Si structure photodiodes in a strong magnetic field
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 98 === Photodiodes with a p-MnZnO/n-Si substrate structure were fabricated. The Mn-doped p-type ZnO(p-MnZnO) films were deposited by ultrasonic spray pyrolysis on a (100)-oriented silicon substrate. Next, the sample is examined by Transsmittance Spectrum、Scanning Ele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f94hqv |