Development of Process Window Analysis System for Nano-scale Lithography

• Main Authors: Yong-Zhi, Chen, 陳勇志
• Other Authors: Jing-Jou, Tang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/52213616974218752187

碩士 === 南台科技大學 === 電子工程系 === 98 === In Semiconductor Processing, effective control of the variation of critical dimension (CD) is very important. As manufacturing technology advances, devices size are made much smaller , making the error in the manufacturing process caused the line width variation more and more serious, the manufacturability are also more and more difficult. Before the production of the circuit, it is a necessary part to simulate and evaluate the process variation. Now, Optical Lithography is a technology trend for semiconductor process, the variation of focus is a critical factor, general speaking, we hope depth of focus (DOF) getting much better, that is more suitable for production. But errors in exposure dose are an inevitable part of any manufacturing process; exposure dose become larger or smaller will cause the line width variation .Therefore, process engineers can get a variation in line width by process window (PW) can be tolerated within depth of focus of the exposure machine and it is corresponding range of exposure dose, and get a balance between two parameters. In this paper, the optical lithography simulators SPLAT and SAMPLE-3D are all provided by the University of California, Berkeley. This optical lithography simulators will be extended and integrated, and be combined with exposure-defocus tree (E-D Tree) concept, then Process Window Analysis System is developed by Python .Using the system, we simulate the result of isolated line and dense line which is general literature to explore under the different process conditions, then observe and discuss the result.