A Low-power High Read Stability SRAM Cell Design Using Single Bitline
碩士 === 南台科技大學 === 電子工程系 === 98 === In integrated circuit, static random access memory (SRAM) occupies lots of area within a microprocessor and system-on-chip (SoC) design. To design a SRAM cell, four key points must be taken into account, including high stability, low power consumption, low latency...
Main Authors: | Zhu, Gia-Sheng, 朱嘉昇 |
---|---|
Other Authors: | T.K. Tien |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/46447342806995531430 |
Similar Items
-
A Low-Power SRAM Design Using Quiet-Bitline Architecture
by: Shin-Pao Cheng, et al.
Published: (2007) -
Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM
by: Kiryong Kim, et al.
Published: (2021-01-01) -
A 6T Transpose SRAM using Hierarchical-Bitline-Steering Control Scheme
by: Chen, Yi-Ju, et al.
Published: (2017) -
High Read Stability SRAM Cell Design
by: Min-Hung Li, et al. -
A Low Power and High Read Stability SRAM Cell Using Single-ended Bit-line
by: Wang, Chein-Hung, et al.