The Investigation on Subthreshold Behavior Model for Symmetrical Tri-material Gate-Stack Double Gate MOSFETs
碩士 === 南台科技大學 === 電子工程系 === 98 === Based on the resultant solution of two-dimensional (2D) Poisson’s equation in silicon region, a new, compact and analytical model for nanoscale fully depleted, symmetrical tri-material gate stack double-gate (STMGSDG) metal–oxide–semiconductor field-effect transist...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18839683694977057722 |