Controlling the thermal reaction at Hf-based/Si gate stack by MOCVD technique
碩士 === 中國文化大學 === 數位機電科技研究所 === 98 === The conventional material (SiO2) as the gate dielectric has to be replaced due to the size of devices still scaling down. When the thickness of gate oxide was down to 2nm, the leakage current increased dramatically which was caused by the direct tunneling effec...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/01435612051541652895 |