Effect of additives on the kinetics of immersion micro-plating of copper

• Main Authors: Yu-Chen Huang, 黃于真
• Other Authors: Wen-Pin Yang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/23172149745094287478

碩士 === 國立聯合大學 === 化學工程學系碩士班 === 98 === The main purpose of this experiment was to discuss the development of new additives to copper deposition on the mechanism and kinetics. The first part of the based solution of low-conc. copper with high acidity were to the electrochemical analyzer to make cyclic linear sweep voltammetry (CLSV) to observe the effects of additives on copper deposition mechanism with change the concentration of organic additives and changes in temperature of the system. The second part of the analysis of potentionstatic copper deposition using the aboved solution as a foundation, the experimental behavior was kept in the range of to -0.3 or -0.65 voltage，respectively，and hanging temperature to investigate the stability of additives, thickness distribution, adsorptivity and kinetic. The experiment results were found that a single molecular additives containing multiple functional group, the competitive reaction between the functional groups leading the complex mechanism of copper deposition. For the effect of deposition behavior on the copper reduction, the additives with or without the chloride ion do not different because the adsorption of additives are strong or the bonding strength of between copper (or cuprous) ions and a addition are large. In the high-voltage (-0.65V) and high temperature(45℃、55℃)，the results indicated the reduction rate of the copper deposition increase.