| Summary: | 碩士 === 國立臺灣科技大學 === 機械工程系 === 98 === Thin film technology has been widely applied on IC, Opto-Electronics and related application due to the advantages of structure minimization and specific physical and chemical properties compared with traditional bulk materials. However, the performance of material properties of thin film is strongly affected by the residual stress that is unavoidable after deposition process, thermal annealing and surface abrasive machining. This reasearch is to investigate the residual stress of CMP using GIXRD. Some factors of sample variation, residual stress distribution variations induced by film or substrate thickness have been studied by the developed measurement method. The radius of sub-surface lattice curvature of single crystal silicon wafer have been investigated with the influence of thin film residual stress and wafer fabrication using reflection x-ray rocking curve (XRC) measurement. Then, the CMP experiement and simulated results of ANSYS have been used to discuss the influence of wafer wapage by CMP process. In this study, the XRR, GIXRD, XPS and a dynamic electrochemistry analysis have combined to investigate the formation and wear of passivation layer, also the surface quality and CMP slurry reaction. The dynamic electrochemistry analysis has been performed on an ECMP system to measure the PD-Curve during CMP. The formation and wear process of passivation layer can be observed on PD-Curve. Thererforre, experimental results of this reasarch can be used to evaluate the residual stress induced by Cu-CMP process, and further for developing a stress-freee CMP process.
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