Investigation on Silicon Heterojunction Layers Prepared by RF-PECVD
碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and T...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45480178292569085599 |
| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and TBP were used as the doping gases.
We present implied open circuit voltage and effective lifetime in silicon heterojunction as the indicators. The thin intrinsic a-Si:H were prepared by SiH4 and H2 under different dilution ratio. It is found that a better interface passivation of SHJ was obtained by 15 nm thickness intrinsic a-Si:H. In this experiment, the implied open circuit voltage of Silicon heterojunction is 655 mV, effective lifetime is 350 μs.
|
|---|