Investigation on Silicon Heterojunction Layers Prepared by RF-PECVD
碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and T...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45480178292569085599 |