The study of different growth conditions and metallic precursors in synthesizing GaN nanowires
碩士 === 國立臺灣科技大學 === 工程技術研究所 === 98 === Due to the progress in synthesizing GaN films, GaN/GaInN light-emitting diodes (LEDs) have successfully developed and are the most important optoelctronic component. Therefore, group III nitrides have become important semiconductor materials. Group III nitrides...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15187911408290032030 |