Low-temperature Fabrication Process for High-K Gate Dielectrics Thin Film Transistors
碩士 === 臺灣大學 === 應用力學研究所 === 98 === A newly developed process for making high-K dielectric thin film transistors is presented. Starting from a Silicon substrate, high-K materials such as Aluminum, Titanium and Tantalum were coated to form the metal gate. As these three chosen materials can be...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10954986553011197690 |