| Summary: | 碩士 === 臺灣大學 === 電子工程學研究所 === 98 === This thesis discusses systematically about how to achieve the well-aligned and size-homogeneous germanium quantum dots (Ge QDs).
The Si (001) substrates were fabricated by electron beam (E-beam) lithography and reactive ion etching (RIE), which result in circle-shape periodic nano-patterned on the surface. Then, Ge QDs were grown on the circle-patterned Si (001) template in ultrahigh vacuum chemical vapor deposition (UHV-CVD) chamber using Stranski-Krastanow (SK) growth mode. We successfully realize one Ge QD in one hole by modulating the inner morphology of hole array, the pitch of hole array, and the size of hole array. The samples were measured with scanning electron microscope (SEM) and atomic force microscope (AFM). Finally, we propose applying chemical potential model to understand physical mechanism of alignment of Ge QDs and also hope to forecast experiment results.
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