Growth of well-aligned Ge quantum dots by adjusting the inner morphology of nano-hole array on Si substrate
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === This thesis discusses systematically about how to achieve the well-aligned and size-homogeneous germanium quantum dots (Ge QDs). The Si (001) substrates were fabricated by electron beam (E-beam) lithography and reactive ion etching (RIE), which result in circle-sh...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29359201902735440185 |